POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY

Authors
KOVALEV D BENCHORIN M DIENER J KOCH F KUX A EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG
Citation
D. Kovalev et al., POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY, Thin solid films, 276(1-2), 1996, pp. 120-122
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
120 - 122
Database
ISI
SICI code
0040-6090(1996)276:1-2<120:POPSP->2.0.ZU;2-R
Abstract
We report the observation of the anisotropy of the polarization proper ties of the porous Si photoluminescence. In the edge excitation geomet ry (exciting light incident on a cleaved edge of the sample) the lumin escence polarization is aligned mainly in the [100] direction normal t o the surface. The effect is described within the framework of a diele ctric model in which porous Si is considered as an aggregate of slight ly deformed, elongated and/or flattened, dielectric elliptical Si nano crystals with preferred orientation normal to the surface.