INVESTIGATION OF THE QUENCHING MECHANISMS OF THE POROUS SILICON LUMINESCENCE

This work is devoted to the analysis of the voltage dependence of the luminescence of n-type nanoporous films. The correlations between the behaviour of the photoluminescence and electroluminescence signal obta ined from the same sample allow one to confirm that the emission quenc hing mechanism is related to the injection of electrons into the cryst allites. When the samples are partially oxidised, the injection condit ions are strongly modified, leading to significant changes in the obse rved voltage dependence of the emission.