TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE IN POROUS AMORPHOUS-SILICON

Authors
BUSTARRET E SAUVAIN E LIGEON M ROSENBAUER M
Citation
E. Bustarret et al., TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE IN POROUS AMORPHOUS-SILICON, Thin solid films, 276(1-2), 1996, pp. 134-137
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
134 - 137
Database
ISI
SICI code
0040-6090(1996)276:1-2<134:TPIPA>2.0.ZU;2-A
Abstract
Having shown by transmission electron microscopy that a suitable elect rolytic processing of boron-doped amorphous hydrogenated silicon (a-Si :H) yields porous amorphous films with a nanometre-scale microstructur e similar to that of highly porous p-type crystalline silicon layers ( PcSL), we report and discuss the qualitative similarities and quantita tive differences between the temperature dependence of the time-resolv ed and steady-state photoluminescence (PL) in both materials.