A NOVEL CAPACITOR TECHNOLOGY-BASED ON POROUS SILICON

A capacitor based on an electrochemically etched macroporous silicon s ubstrate and a layered dielectric (ONO) is presented. This solid-state technology allows us to realize values of specific capacitance which so far could only be reached by electrolytic capacitors. The dependenc e of the capacitance on temperature, frequency, applied bias and time of operation is found to be negligible. Due to a low series resistance and a operating temperature of at least 200 degrees C the device with stands high a.c. currents. Being a silicon chip, the capacitor is full y compatible with today's surface mounted device and multi-chip module technologies.