CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION

In this paper, techniques for controlling the growth of the bottom oxi de formed by simple electrochemical oxidation of porous Si films were explored and the resulting porous silicon-on-oxide structures were cha racterized. The thickness, uniformity, and density of the bottom oxide layer can be adjusted by selecting the porous silicon morphology and controlling the conditions of oxide formation. In particular, very uni form interfaces between the oxide layer and a porous silicon overlayer were obtained in multi-texture porous silicon samples.