STRONG 1.54-MU-M LUMINESCENCE FROM ERBIUM-DOPED POROUS SILICON

Authors
DOROFEEV A BACHILO E BONDARENKO V GAPONENKO N KAZUCHITS N LESHOK A TROYANOVA G VOROZOV N BORISENKO V GNASER H BOCK W BECKER P OECHSNER H
Citation
A. Dorofeev et al., STRONG 1.54-MU-M LUMINESCENCE FROM ERBIUM-DOPED POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 171-174
Citations number
29
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
171 - 174
Database
ISI
SICI code
0040-6090(1996)276:1-2<171:S1LFEP>2.0.ZU;2-G
Abstract
Porous silicon doped by erbium electrodeposition or from spin-on silic a gel film followed by rapid thermal processing at 950 degrees C or hi gher exhibited liquid-nitrogen and room-temperature luminescence at 1. 54 mu m. The full width at half maximum was about 0.01 eV at 77 K. The mechanism of light emission from erbium-doped porous silicon is propo sed. The direct bandgap of nanocrystallites in porous silicon is consi dered to provide an effective pumping media.