The origin of the electronic free charge carrier accumulation/depletio
n in the porous silicon skeleton contacted with an electrolyte is dete
rmined by investigating the limiting step in the conduction process. E
xperimental evidence, supported by quantitative considerations, show t
hat the porous silicon can be conductive if the free charge carrier Au
x supplied by the substrate is not the rate-determining step of the el
ectrical current conduction.