CONDUCTION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE

Citation
B. Gelloz et al., CONDUCTION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Thin solid films, 276(1-2), 1996, pp. 175-178
Citations number
18
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
175 - 178
Database
ISI
SICI code
0040-6090(1996)276:1-2<175:CIPSCB>2.0.ZU;2-F
Abstract
The origin of the electronic free charge carrier accumulation/depletio n in the porous silicon skeleton contacted with an electrolyte is dete rmined by investigating the limiting step in the conduction process. E xperimental evidence, supported by quantitative considerations, show t hat the porous silicon can be conductive if the free charge carrier Au x supplied by the substrate is not the rate-determining step of the el ectrical current conduction.