INFLUENCE OF ANODIZATION TIME AND CURRENT-DENSITY ON THE PHOTOLUMINESCENCE OF POROUS N-SI

Authors
MARTIN P FERNANDEZ JF CUEVAS F ALGUERO M SANCHEZ C
Citation
P. Martin et al., INFLUENCE OF ANODIZATION TIME AND CURRENT-DENSITY ON THE PHOTOLUMINESCENCE OF POROUS N-SI, Thin solid films, 276(1-2), 1996, pp. 212-215
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
212 - 215
Database
ISI
SICI code
0040-6090(1996)276:1-2<212:IOATAC>2.0.ZU;2-M
Abstract
Porous silicon layers have been prepared from n-type Si wafers of 20-5 0 Omega cm. The influence of current density and electrolysis time on the intensity and peak position of the photoluminescence (PL) band has been investigated. It has also been observed that the PL intensity in creases with the time after preparation of porous Si.