INFLUENCE OF PHOTOLUMINESCENCE AND TRAPPING ON THE PHOTOVOLTAGE AT THE POR-SI P-SI STRUCTURE/

The influence of photoluminescence (PL) and trapping on photovoltage ( PV) transients has been compared for as-anodized and for oxidized in a ir por-Si/p-Si structures. Measurements were carried out with time-res olved surface photovoltage and with contact potential difference techn iques. Light sources with wavelengths from the infrared to the ultravi olet regions were used for excitation. It was shown that PV based on P L light can be used for the estimation of the PL efficiency. Electron trapping was found to modify the band bending at the por-Si/p-Si inter face of the oxidized in air sample. Further it was shown that non-mono tonous PV transient features took place on oxidized por-Si/p-Si struct ures at high levels of optical excitation.