ENHANCED LIGHT-ABSORPTION IN ANODICALLY ETCHED SILICON-WAFERS

Citation
K. Grigoras et al., ENHANCED LIGHT-ABSORPTION IN ANODICALLY ETCHED SILICON-WAFERS, Thin solid films, 276(1-2), 1996, pp. 228-230
Citations number
3
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
228 - 230
Database
ISI
SICI code
0040-6090(1996)276:1-2<228:ELIAES>2.0.ZU;2-N
Abstract
Two applications of porous silicon in the photovoltaic solar cell tech nology were investigated. The light-trapping effect was verified in po rous silicon covered wafers by spectral transmission and photoresponse measurements. In this case, micron-size pores act as efficient scatte rers for the incoming radiation. A thin nanoporous layer, which has a refractive index lower than that of silicon, was used for antireflecti on coating of the solar cells. The increase of the short-circuit curre nt by nearly 30% after a porous layer application has been observed.