METALLIZATION OF POROUS SILICON BY CHEMICAL-VAPOR INFILTRATION AND DEPOSITION

Citation
Bj. Aylett et al., METALLIZATION OF POROUS SILICON BY CHEMICAL-VAPOR INFILTRATION AND DEPOSITION, Thin solid films, 276(1-2), 1996, pp. 253-256
Citations number
5
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
253 - 256
Database
ISI
SICI code
0040-6090(1996)276:1-2<253:MOPSBC>2.0.ZU;2-T
Abstract
Thin cobalt layers have been grown on and in porous silicon by chemica l vapour infiltration and deposition using HCo(CO)(4). The process can be controlled to give a capping layer with or without metal in the po res. Thin coats on the pore walls have been measured to depths of seve ral mu m and thick coats to depths of 0.1 mu m. Results from mass spec troscopy indicate that when a cobalt hydride precursor molecule decomp oses on a pore wall it releases its hydrogen atom accompanied by three from the pore wall, so forming direct metal-silicon bonds.