PHOTOLUMINESCENCE OF LASER-DEPOSITED POROUS SILICON AND ITS CORRELATION WITH DENSITY OF ELECTRONIC STATES DETERMINED BY SCANNING-TUNNELING-MICROSCOPY

Authors
LAIHO R PAVLOV A
Citation
R. Laiho et A. Pavlov, PHOTOLUMINESCENCE OF LASER-DEPOSITED POROUS SILICON AND ITS CORRELATION WITH DENSITY OF ELECTRONIC STATES DETERMINED BY SCANNING-TUNNELING-MICROSCOPY, Thin solid films, 276(1-2), 1996, pp. 279-283
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
279 - 283
Database
ISI
SICI code
0040-6090(1996)276:1-2<279:POLPSA>2.0.ZU;2-G
Abstract
Porous silicon layers are prepared by laser deposition in different lo w-pressure ambients. The specimens deposited under vacuum or the O-2 a tmosphere have the main photoluminescence in the yellow and those depo sited in H-2 have photoluminescence in the red region of wavelengths. The surface morphology and surface conductance of the specimens, inves tigated by scanning tunnelling microscopy, show gap features with corr elation between the PL spectra and the density of electronic states.