THE INFLUENCE OF PREPARATION CONDITIONS ON THE PHOTOLUMINESCENCE SPECTRA OF LIGHT-EMITTING SI PREPARED BY LASER-PULSE IRRADIATION OF A-SI-H

Authors
ELKADER KMA BORUSIK O CHVOJ Z ULRYCH I OSWALD J PELANT I STUCHLIK J CHAB V KOCKA J DYER TE MARSHALL JM
Citation
Kma. Elkader et al., THE INFLUENCE OF PREPARATION CONDITIONS ON THE PHOTOLUMINESCENCE SPECTRA OF LIGHT-EMITTING SI PREPARED BY LASER-PULSE IRRADIATION OF A-SI-H, Thin solid films, 276(1-2), 1996, pp. 306-309
Citations number
11
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
306 - 309
Database
ISI
SICI code
0040-6090(1996)276:1-2<306:TIOPCO>2.0.ZU;2-O
Abstract
We report on room-temperature photoluminescence (PL) properties of lig ht-emitting silicon produced by excimer (XeCl, ArF) laser crystallizat ion of undoped hydrogenated amorphous silicon (a-Si:H). PL intensity i ncreases linearly with the number of applied laser pulses. We annealed the recrystallized a-Si:H samples to modify the PL intensity and the spectral position. When compared with the XeCl laser processing, ArF l aser crystallization produces more intense FL, shifted towards the blu e region. Time-resolved reflectivity spectra and nucleation theory are used to study the difference between the ArF and XeCl laser crystalli zations.