The realization and dissemination of ultraviolet spectral responsivity
scales at the 0,1% level require a solid-state detector with a predic
table, and preferably an invariant, spectral responsivity. Unfortunate
ly, the most widely used detectors for the ultraviolet, silicon photod
iodes, have a spectral responsivity that varies rapidly in the ultravi
olet due to multiple ionization and recombination effects. This paper
describes the properties of alternative wide-bandgap photodiodes such
as GaAsP and GaP, together with specially developed detectors based on
SiC. These devices are ''solar blind'' to various degrees, thus offer
ing significant advantages over silicon photodiodes in certain applica
tions. Measured quantum efficiency for all these types of photodiode i
s presented, together with an evaluation of permanent and short-term c
hanges in quantum efficiency of the detectors following exposure to UV
radiation.