RBS ION IMPLANTER FACILITY FOR IN-SITU ION-SURFACE STUDIES/

An RBS/ion implanter facility for high-energy ion-surface interaction studies was constructed. The potential application of the facility was demonstrated by studying ion-stimulated processes in Ni films on an A l substrate at elevated temperatures and preferential sputtering of Ni 4Mo single crystals. An unusual temperature behaviour for the radiatio n enhanced diffusion rate in the vicinity of the Curie point for Ni wa s seen. The sputtering of (001) and (111) faces of Ni4Mo single crysta l with 20-80 keV inert gas ions was shown to enrich the surface in Mo, which is the same for both faces.