A method was developed for fabricating the tips with double tunneling
(DTT) which is based on the successive electrodeposition of polyanilin
e films and Cu or Tl2O3 clusters on a Pt-Ir-tip-ultramicroelectrode (U
ME). Specific features of Cu crystallization and STM behaviour of modi
fied tips demonstrate continuity of the polymer film. The presence of
junctions metal/insulator/metal (semiconductor) at the end of the prep
ared tip is also proved by STM experiments. Copyright (C) 1996 Elsevie
r Science Ltd