GROWTH OF IODINE-DOPED ZNS0.07SE0.93 DISORDERED ALLOYS AND ELECTRON-MOBILITY ENHANCEMENT BY ORDERED STRUCTURES IN (ZNS)(3)(ZNSE)(42)

Carrier transport properties of (ZnS)(3)(ZnSe)(42) ordered and ZnS0.07 Se0.93 disordered alloys are studied. Iodine-doped ZnS0.07Se0.93 was g rown by hydrogen radical-enhanced chemical vapor deposition at a low t emperature of 200 degrees C. These iodine-doped ZnS0.07Se0.93 are char acterized by sharp x-ray diffraction peaks and dominant blue band-edge emissions in photoluminescence spectra. It was found that (ZnS)(3)(Zn Se)(42) ordered alloys show higher electron mobility over 100 cm(2)/V s than that of ZnS0.07Se0.93 disordered alloys at a low electron conce ntration of similar to 10(16) cm(-3), even though these crystals have the same sulfur composition and crystallinity. This mobility enhanceme nt in the ordered alloys is attributed to the elimination of ''disorde r scattering'' originated from random atomic fluctuations in the disor dered alloys. Carrier scattering mechanisms and donor activation proce sses in the ordered and disordered alloys were further determined by a temperature dependence of Hall measurement. (C) 1996 American Institu te of Physics.