ELECTRICAL-PROPERTIES OF (ZR,SN)TIO4 DIELECTRIC THIN-FILM PREPARED BYPULSED-LASER DEPOSITION

We have been successful in obtaining temperature-stable crystallized t hin film of (Zr,Sn)TiO4. Preferential (Ill)-oriented (Zr,Sn)TiO4 thin film was prepared by pulsed laser deposition. Effects of crystallizati on were elucidated based on a comparison of electric properties of cry stallized and amorphous (Zr,Sn)TiO, film. For crystallized film, the t emperature coefficient of capacitance (TCC) was 20 ppm/degrees C at 3 MHz and the dielectric constant epsilon(r)=38 in the microwave range o f 1-10 GHz. These values are superior to those for amorphous him (TCC= 220 ppm/degrees C, epsilon(r)=27). The crystallization of this materia l was found quite effective for improving dielectrical properties. Ato mic force microscope images showed the surface morphologies of crystal lized and amorphous film of (Zr,Sn)TiO4 to differ. (C) 1996 American I nstitute of Physics.