GROUND AND EXCITED-STATE EXCITON SPECTRA FROM GAN GROWN BY MOLECULAR-BEAM EPITAXY

The emission and reflection spectra of GaN have been investigated in t he intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exc iton excited states associated with the two top valence bands were als o observed. The exciton binding energies, the band-gap energies, and t he exciton Bohr radii are all reported along with the dielectric const ant and the spin-orbit and crystal-field parameters for GaN. (C) 1996 American Institute of Physics.