MULTIBAND COUPLING EFFECTS ON ELECTRON QUANTUM-WELL INTERSUBBAND TRANSITIONS - REPLY

Authors
PENG LH FONSTAD CG
Citation
Lh. Peng et Cg. Fonstad, MULTIBAND COUPLING EFFECTS ON ELECTRON QUANTUM-WELL INTERSUBBAND TRANSITIONS - REPLY, Journal of applied physics, 80(1), 1996, pp. 603-605
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
80
Issue
1
Year of publication
1996
Pages
603 - 605
Database
ISI
SICI code
0021-8979(1996)80:1<603:MCEOEQ>2.0.ZU;2-5
Abstract
It is shown that the 14 band k . p analysis of TE (x,y)-polarized quan tum well intersubband transitions can be categorized as (i) second ord er (bulk limit), and (ii) first order (quantum limit) perturbation dep ending on the structures. In the quantum limit, TE-active intersubband transition prevails. This explains the recent reports of normal incid ent quantum well photodetectors made of InGaAs/GaAs, InGaAs/AlGaAs, an d GaAs/AlGaAs. (C) 1996 American Institute of Physics.