EXTENDED THERMODYNAMICS TESTED BEYOND THE LINEAR REGIME - THE CASE OFELECTRON-TRANSPORT IN SILICON SEMICONDUCTORS

Citation
Am. Anile et O. Muscato, EXTENDED THERMODYNAMICS TESTED BEYOND THE LINEAR REGIME - THE CASE OFELECTRON-TRANSPORT IN SILICON SEMICONDUCTORS, Continuum mechanics and thermodynamics, 8(3), 1996, pp. 131-142
Citations number
20
Categorie Soggetti
Mechanics,Thermodynamics
ISSN journal
09351175
Volume
8
Issue
3
Year of publication
1996
Pages
131 - 142
Database
ISI
SICI code
0935-1175(1996)8:3<131:ETTBTL>2.0.ZU;2-T
Abstract
A set of closed hydrodynamic-like equations is derived from Boltzmann' s transport equation (BTE) describing charge transport in semiconducto rs. The moment hierarchy is closed by using the entropy principle: suc h closure is checked with Monte Carlo simulations for silicon.