MICRO-RAMAN STUDY OF UV LASER-ABLATION OF GAAS AND SI SUBSTRATES

Authors
GARCIA C RAMOS J PRIETO AC JIMENEZ J GEERTSEN C LACOUR JL MAUCHIEN P
Citation
C. Garcia et al., MICRO-RAMAN STUDY OF UV LASER-ABLATION OF GAAS AND SI SUBSTRATES, Applied surface science, 96-8, 1996, pp. 370-375
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
96-8
Year of publication
1996
Pages
370 - 375
Database
ISI
SICI code
0169-4332(1996)96-8:<370:MSOULO>2.0.ZU;2-R
Abstract
Laser ablation of semiconductors presents an increasing interest for d ifferent purposes, such as surface modification. Morphologic and struc tural changes induced by UV-pulsed laser beams on GaAs and Si are stud ied by means of surface topography (optical interferometry) and micro- Raman spectroscopy. Crystal order and chemical composition (stoichiome try and dopant distribution) are shown to be changed by the ablation w ith energy above the melting threshold. Results are compared for GaAs and Si substrates.