LASER-INDUCED FORMATION OF VISIBLE-LIGHT EMITTING SILICON

Authors
DIMOVAMALINOVSKA D TZOLOV M MALINOWSKI N MARINOVA T KRASTEV V
Citation
D. Dimovamalinovska et al., LASER-INDUCED FORMATION OF VISIBLE-LIGHT EMITTING SILICON, Applied surface science, 96-8, 1996, pp. 457-462
Citations number
22
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
96-8
Year of publication
1996
Pages
457 - 462
Database
ISI
SICI code
0169-4332(1996)96-8:<457:LFOVES>2.0.ZU;2-K
Abstract
Light emitting silicon has been prepared by Ar laser (514.5 nm) induce d stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The inte nsity and position of the PL depend on the power and the duration of l aser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.