GROWTH, STRUCTURING AND CHARACTERIZATION OF ALL-OXIDE THIN-FILM DEVICES PREPARED BY PULSED-LASER DEPOSITION

Authors
CILLESSEN JFM WOLF RM GIESBERS JB BLOM PWM GROSSEHOLZ KO PASTOOR E
Citation
Jfm. Cillessen et al., GROWTH, STRUCTURING AND CHARACTERIZATION OF ALL-OXIDE THIN-FILM DEVICES PREPARED BY PULSED-LASER DEPOSITION, Applied surface science, 96-8, 1996, pp. 744-751
Citations number
18
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
96-8
Year of publication
1996
Pages
744 - 751
Database
ISI
SICI code
0169-4332(1996)96-8:<744:GSACOA>2.0.ZU;2-U
Abstract
The combination of a variety of oxidic thin films in two materials sys tems is described. The first one focuses on the growth of BaZrO3 on Sr TiO3 (both perovskites) and the use of these stacks as a substrate for the growth of magnetic ferrite spinel films. The second system shows the combination of oxidic conductors, ferroelectrics and semiconductor s in all-oxide field effect devices. The control of stoichiometry for the ferroelectric used in this device (consisting of highly volatile c omponents) as well as the improvement of thickness uniformity using of f-axis PLD are discussed.