Ko. Grosseholz et al., ELECTRICAL CHARACTERIZATION OF SEMICONDUCTING LA DOPED SRTIO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION, Applied surface science, 96-8, 1996, pp. 784-790
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
We present the growth of La doped SrTiO3 thin films on MgAl2O4 (100) s
ubstrates using the Pulsed Laser Deposition (PLD) technique. The cryst
al quality of the films was analyzed by X-Ray Diffraction (XRD) and Ru
therford Backscattering Spectroscopy (RBS). A substitution of La on th
e Sr sites can be deduced for several La concentrations from the RES m
easurements in combination with Hall measurements. Temperature depende
nt conductivity measurements using the van der Pauw technique reveal t
he semiconducting behavior of the films. The conductivity of the sampl
es at room temperature can vary over several orders of magnitude depen
ding on the La concentration in the films and the oxygen partial press
ure during PLD. The Hall mobility of the films was found to be tempera
ture dependent and is about 3 cm(2)/Vs at room temperature, in contras
t to bulk single crystals, where the mobility is known to be 6 cm(2)/V
s. A scattering mechanism is proposed to explain the observed mobility
behavior.