DEPOSITION OF HGCDTE EPITAXIAL LAYERS ON ANISOTROPICALLY ETCHED SILICON SURFACES BY LASER EVAPORATION

HgCdTe films have been deposited on Si anisotropically etched microrel ief (AEMR) surfaces by YAG:Nd3+ pulsed laser without substrate heating . The formation and a comparative investigation of morphology and some electrophysical properties of HgCdTe films and HgCdTe/Si heterosystem s on flat and microrelief substrates have been made in dependence on t he distance from target to substrate and series of laser pulses. The d eposited films and heterosystems were characterized by different techn iques: scanning electron microscopy (SEM), micro X-ray electron probe analysis and current-voltage characteristics method. Based on these da ta it has been shown that the film growth process on Si AEMR surface i n the morphological stability conditions (films reproduce the substrat e microrelief) is the result of layer by layer mechanism with step mig ration and without nucleation, The difference in current-voltage chara cteristics are discussed in term of injection phenomena and depends st rongly on laser deposition conditions.