VARIABLE I-V CHARACTERISTICS METHOD APPLIED TO MODEL THE ELECTRICAL BEHAVIOR OF AN IRRADIATED P-N-JUNCTION - EXTENSION TO THE JUNCTION IN AN IRRADIATED TRANSISTOR

Authors
SUDRE C PELANCHON F
Citation
C. Sudre et F. Pelanchon, VARIABLE I-V CHARACTERISTICS METHOD APPLIED TO MODEL THE ELECTRICAL BEHAVIOR OF AN IRRADIATED P-N-JUNCTION - EXTENSION TO THE JUNCTION IN AN IRRADIATED TRANSISTOR, Radiation effects and defects in solids, 138(1-2), 1996, pp. 17-28
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
138
Issue
1-2
Year of publication
1996
Pages
17 - 28
Database
ISI
SICI code
1042-0150(1996)138:1-2<17:VICMAT>2.0.ZU;2-4
Abstract
The electrical behavior of a diode, either reverse or forward biased, under a radiation pulse, is considered. The variations of the current produced by the diode are explained by the consideration of variable I -V characteristics, showing the different diode behaviors according to the working mode. This approach is then applied to explain some elect rical properties of an irradiated transistor.