DIODE IDEALITY FACTOR FOR MOSFETS CHARACTERIZATION OF DOSE-EFFECT

Authors
BENDADA E DELABARDONNIE M MIALHE P CHARLES JP
Citation
E. Bendada et al., DIODE IDEALITY FACTOR FOR MOSFETS CHARACTERIZATION OF DOSE-EFFECT, Radiation effects and defects in solids, 138(1-2), 1996, pp. 39-48
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
138
Issue
1-2
Year of publication
1996
Pages
39 - 48
Database
ISI
SICI code
1042-0150(1996)138:1-2<39:DIFFMC>2.0.ZU;2-Y
Abstract
An innovative method for device characterization is developed to quali fy radiation effects. A study of radiation induced effects on carrier transport phenomena has been carried out on the body-drain junction of power HEXFETs. A large increase of the recombination current is point ed out. The degradation, by ionizing radiation of the junction idealit y factor is shown to be controlled by the total dose. These effects ar e discussed and related to the oxide-semiconductor interface potential .