The hardening effect on the surface layers of WC-Go alloys after Ar+-
and N+-ion implantation with the fluence in the range 1 divided by 8.7
x 10(17) cm(-2) has been investigated at room temperature and under h
eating with an ion beam. The depth of the Anger distribution profiles
and the microhardness of implanted samples were measured. The radiatio
n-stimulated diffusion of nitrogen atoms and the microhardness enhance
ment were observed. The contribution of the polymorphic Go-phase trans
formation and the production of Co-N compounds is discussed.