DIVACANCY LEVELS IN SILICON AFTER NEUTRON-IRRADIATION

Authors
BALLO P RAJNIAK D MACKO P HARMATHA L
Citation
P. Ballo et al., DIVACANCY LEVELS IN SILICON AFTER NEUTRON-IRRADIATION, Radiation effects and defects in solids, 138(1-2), 1996, pp. 113-117
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
138
Issue
1-2
Year of publication
1996
Pages
113 - 117
Database
ISI
SICI code
1042-0150(1996)138:1-2<113:DLISAN>2.0.ZU;2-B
Abstract
The electron energy spectra of divacancies created by fast neutron rad iation have been computed by means of the cluster approach with a comb ination of the quantum chemical molecular orbital method and the stati c relaxation process. The computed results were verified by Deep Level Transient Spectroscopy (DLTS) and found to be similar to the numerica l data.