RADIATION HARDNESS OF SEMICONDUCTOR-DETECTORS FOR HIGH-ENERGY PHYSICS

Authors
KHLUDKOV SS STEPANOV VE TOLBANOV OP
Citation
Ss. Khludkov et al., RADIATION HARDNESS OF SEMICONDUCTOR-DETECTORS FOR HIGH-ENERGY PHYSICS, Journal of physics. D, Applied physics, 29(6), 1996, pp. 1559-1563
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
29
Issue
6
Year of publication
1996
Pages
1559 - 1563
Database
ISI
SICI code
0022-3727(1996)29:6<1559:RHOSFH>2.0.ZU;2-2
Abstract
The concept of radiation hardness of semiconductor materials in terms of local charge neutrality is proposed. Deep centres are invoked to pl ay the basic role in the attainment of radiation hardness by high-resi stivity semiconductor charged particle detectors exposed to neutron ir radiation.