Ss. Khludkov et al., RADIATION HARDNESS OF SEMICONDUCTOR-DETECTORS FOR HIGH-ENERGY PHYSICS, Journal of physics. D, Applied physics, 29(6), 1996, pp. 1559-1563
The concept of radiation hardness of semiconductor materials in terms
of local charge neutrality is proposed. Deep centres are invoked to pl
ay the basic role in the attainment of radiation hardness by high-resi
stivity semiconductor charged particle detectors exposed to neutron ir
radiation.