THE EFFECT OF VARIATION IN HYDROGEN DILUTION AND RF POWER-DENSITY ON THE PROPERTIES OF A-SIGE-H AND RELATED SOLAR-CELLS

The effect of systematic variation in hydrogen dilution and RF power d ensity on the different properties (such as optoelectronic and structu ral properties and defect density) of hydrogenated amorphous silicon g ermanium alloy (a-SiGe:H) films, prepared at ultra-high vacuum (10(-10 ) Torr) in a plasma-enhanced chemical vapour deposition multichamber s ystem with a load-lock facility has been studied. Proper structural re laxation of the alloy matrix is controlled by the growth zone reaction s. These grown zone reactions depend on the type and number density of reactive radicals and on their energy and momentum. All these factors , hence growth zone reactions, may be changed by variation of the inte rlinked parameters hydrogen dilution and RF power density Another note worthy point is the investigation of the dependence of the improvement in characteristics of single junction solar cells having a-SiGe:H int rinsic layers on that of material quality. Improvement of material qua lity may or may not be reflected in cell performances.