Jj. Shi et al., INTERACTION BETWEEN AN ELECTRON AND OPTICAL PHONONS IN POLAR SEMICONDUCTOR HETEROSTRUCTURES, Zeitschrift fur Physik. B, Condensed matter, 100(3), 1996, pp. 353-364
Interface phonons and bulk-like longitudinal-optical (LO) phonons and
their interaction with an electron are studied for a finite four-layer
heterostructure (FFLHS). An analysis of the field eigenvectors shows
that, in the vicinity of the Brillouin-zone center, an interface trans
verse-optical (TO) mode oscillates at the bulk LO frequency, and an in
terface LO mode oscillates at the bulk TO frequency. Analytic expressi
ons and numerical illustrations for dispersion relations of interface
modes and for electron-phonon coupling functions and scattering rates
are obtained for finite, semi-infinite and infinite quantum well (QW)
structures which are important special cases of an FFLHS. It is shown
that the scattering rates depend strongly on the well width of a QW st
ructure, and that interface modes are much more important than bulk LO
modes when the well width is small. The calculated results also show
that the usual selection rules for intersubband and intrasubband trans
itions break down in asymmetric heterostructures. Moreover, we have fo
und an interesting result. That is, in comparison with the negligibly
small interaction between an electron and the lowest-frequency interfa
ce-mode in symmetric single QWs and commonly used step QWs, this inter
action may be very large in asymmetric single QWs and general step QWs
.