CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/

Authors
POLYAKOV AY SMIRNOV NB GOVORKOV AV CHELNIY AA MILNES AG LI XL LEIFEROV BM ALUEV AN
Citation
Ay. Polyakov et al., CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 79-81
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
39
Issue
2
Year of publication
1996
Pages
79 - 81
Database
ISI
SICI code
0921-5107(1996)39:2<79:COIIIH>2.0.ZU;2-F
Abstract
The conduction band offset value for an In-0.5(Ga0.3Al0.7)(0.5)P/In0.5 Ga0.5P heterojunction has been measured by means of deep level transie nt spectroscopy (DLTS) on Au/n-InGaAlP Schottky diodes with an InGaP q uantum well incorporated into InGAlP. The offset value thus obtained i s (0.23 +/- 0.025) eV or (0.53 +/- 0.06)Delta E(g) (Delta E(g) being t he bandgap difference between the InGaAlP and the InGaP). This is an i ntermediate value between the one derived from C-V profiling measureme nts and low-temperature photoluminescence measurements.