APPROACH TO IN-SITU CHARACTERIZATION OF POLYSILICON SURFACES ANNEALEDBY XECL EXCIMER-LASER

Authors
NISHIBE T MITSUHASHI H MATSUURA Y KAWAKYU Y
Citation
T. Nishibe et al., APPROACH TO IN-SITU CHARACTERIZATION OF POLYSILICON SURFACES ANNEALEDBY XECL EXCIMER-LASER, Applied surface science, 99(1), 1996, pp. 35-40
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
99
Issue
1
Year of publication
1996
Pages
35 - 40
Database
ISI
SICI code
0169-4332(1996)99:1<35:ATICOP>2.0.ZU;2-Z
Abstract
An approach to in situ characterization of polysilicon surfaces anneal ed by a XeCl excimer laser has been investigated by the UV reflectance method and atomic force microscopy which represents a nano-scale surf ace morphology. The features of the surface morphology were found to b e closely connected to the performance of TFT devices.