Rd. Sanchez et al., APPROXIMATION TO THE METAL-INSULATOR-TRANSITION BY GD3+ DOPING IN PAULI LANIO3 PEROVSKITE, Journal of alloys and compounds, 239(1), 1996, pp. 31-33
The effect on electrical and magnetic properties of Gd3+ doping of LaN
iO3 was studied for Gd concentration x less than or equal to 0.1. The
electrical resistivity rho increases with x, being d rho/dT>0 for all
samples studied. The magnetic susceptibilities were fitted by the func
tion (chi)(T) = (chi 0) - aT(2) + xC(Gd3+)/T. The EPR results are disc
ussed in terms of the Gd3+ paramagnetic moment interactions with the c
rystal field and with the conduction electron spins.