COMPARISON OF RADIATION EFFECTS ON THE OPERATION OF MOS DEVICES UNDERVARIOUS TYPES OF NUCLEAR RADIATION

Authors
DIDYK AY GULBEKIAN GG WRONSKI W
Citation
Ay. Didyk et al., COMPARISON OF RADIATION EFFECTS ON THE OPERATION OF MOS DEVICES UNDERVARIOUS TYPES OF NUCLEAR RADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(1-2), 1996, pp. 84-86
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
111
Issue
1-2
Year of publication
1996
Pages
84 - 86
Database
ISI
SICI code
0168-583X(1996)111:1-2<84:COREOT>2.0.ZU;2-8
Abstract
The simulation of radiation effects in semiconductor devices caused by fast neutrons is achieved with the use of accelerated heavy ions with energies exceeding 1 MeV/n. Experimental results on degradation of sh ift register operation under irradiation with heavy ions, electrons, g amma-rays and fast neutrons are presented and compared. Both dynamic a nd static effects are discussed. Models explaining the different radia tion effects are presented.