PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM

Authors
IVANOV PA ZELENIN VV DANISHEVSKII AM STAROBINETS SG CHELNOKOV VE
Citation
Pa. Ivanov et al., PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 21(3), 1995, pp. 1-9
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
21
Issue
3
Year of publication
1995
Pages
1 - 9
Database
ISI
SICI code
0320-0116(1995)21:3<1:POSELA>2.0.ZU;2-M