ETCH RATES FOR MICROMACHINING PROCESSING

The etch rates for 317 combinations of 16 materials (single-crystal si licon, doped, and undoped polysilicon, several types of silicon dioxid e, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten , titanium, Ti/W alloy, and two brands of positive photoresist) used i n the fabrication of microelectromechanical systems and integrated cir cuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF s olutions, H3PO4, HNO3 + H2O + NH4F, KOH, Type A aluminum etchant, H2O + H2O2 + HF, H2O2, piranha, acetone, HF vapor, XeF2, and various combi nations of SF6, CF4, CHF3, Cl-2, O-2, N-2, and He in plasmas) were mea sured and are tabulated, Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEM S applications are described for the materials.