SEGREGATION AND DISSOLUTION KINETICS OF SB CU(111) AT 673K - EXPERIMENT AND SIMULATION/

We have recently reported a study by AES-LEED technique of dissolution and segregation kinetics of Sb/Cu(111) recorded at 673 K. At this tem perature the dissolution kinetics of one monolayer of Sb deposited at room temperature on the Cu(111) face is very fast at the beginning of the annealing but stops for a given superficial concentration which co rresponds to a p(root 3 x root 3)R30 degrees superstructure. The segre gation kinetics of Sb, recorded at the same temperature but on the sur face of a Cu(Sb)(111) solid solution (0.45 at%), shows an increase of the superficial Sb concentration up to a constant value with the same superstructure. These two kinetics are compared to those which can be theoretically simulated from a kinetic model (KTBIM) which takes into account the energetic driving forces of the segregation phenomenon and the network p(root 3 x root 3)R30(d)egrees experimentally observed.