NEGATIVE-ION FORMATION FROM SICL4 ADSORBED ON SI(100)

Citation
Q. Guo et al., NEGATIVE-ION FORMATION FROM SICL4 ADSORBED ON SI(100), Surface science, 352, 1996, pp. 327-331
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
352
Year of publication
1996
Pages
327 - 331
Database
ISI
SICI code
0039-6028(1996)352:<327:NFFSAO>2.0.ZU;2-V
Abstract
Electron stimulated desorption of negative ions has been investigated with SiCl4 adsorbed at Si(100). Cl- ion is the only negatively charged species detected and the ion yield peaks at 1 ML coverage when SiCl4 is adsorbed at a clean Si(100) surface. The higher ion yield from the first monolayer of SiCl4 is interpreted as due to charge transfer from the surface to the lowest unoccupied level of SiCl4, in association w ith an enhanced symmetry change from T-d to C-3v.