STUDY OF AL2O3 CONDENSATION ON SI(100) AND INP(100) SUBSTRATES

AES (Auger electron spectroscopy) and EELS (electron energy loss spect roscopy) have been used to study the first stages of the Al2O3/Si and Al2O3/InP interfaces formations. Alumina was condensed using an evapor ation cell heated by an electronic bombardment. InP is one of the most promising materials for applications in high speed and optoelectronic devices, but surface and interface properties have an important influ ence on the performance of components. This paper is divided in two pa rts: (1) Test of alumina deposition on Si(100) substrates and comparis on with published results. (2) Condensation on InP(100) substrates (cl eaned with a Ar+ bombardment).