SIMULATION OF HOMOEPITAXIAL GROWTH ON THE DIAMOND (100) SURFACE USINGDETAILED REACTION-MECHANISMS

One-dimensional reactive-flow simulations of a hot-filament CVD-system including detailed surface reaction mechanisms for homoepitaxial diam ond growth are carried out. A growth model for the diamond (100) surfa ce based on elementary chemical reactions steps is introduced. This su rface reaction scheme includes the incorporation of the CH3 radical in the diamond lattice. Homoepitaxial growth on the (100) surface is mod elled for a wide range of experimental reactor parameters. The experim ental growth rates are compared with simulations for two different sur face reaction schemes. It is found that the scheme based on growth at monoatomic steps on the reconstructed (100) surface is more realistic. It shows qualitative agreement with experimental data, whereas the mo re simple mechanism for an unrealistic unreconstructed (100) surface c annot explain the surface temperature dependence of the growth rate co rrectly.