INVERSE-PHOTOEMISSION SPECTRA OF V(100) SURFACE

Citation
Te. Ollonqvist et al., INVERSE-PHOTOEMISSION SPECTRA OF V(100) SURFACE, Surface science, 352, 1996, pp. 693-697
Citations number
37
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
352
Year of publication
1996
Pages
693 - 697
Database
ISI
SICI code
0039-6028(1996)352:<693:ISOVS>2.0.ZU;2-D
Abstract
Here we report the experimental results of unoccupied electronic state s of the clean V(100) surface along the Gamma-H symmetry line. The mea surements were performed with incident electrons in the energy range 1 9-33 eV and the energies of UV photons were analysed by a spherical gr ating spectrometer equipped with the position sensitive detector. The vanadium surface was cleaned by several cycles of argon ion sputtering and annealing. The surface structure of V(100) determined by LEED sho wed a clear surface (1 X 1) geometry pattern. The spectra of the empty states near Fermi level are found to be of the two-dimensional rather than of the three-dimensional bulk character. The states locate at 0. 4, 1.4 and 2.1 eV above Fermi level. We also observed states about 10 eV above Fermi level, which dispersed up to 15 eV at higher incident e lectron energy. The experimental results are compared with band struct ure calculations.