P-B1 DEFECT STUDY AND CHEMICAL CHARACTERIZATION OF THE SI(001)-SIO2 INTERFACE IN OXIDIZED POROUS SILICON

Authors
CANTIN JL SCHOISSWOHL M VONBARDELEBEN HJ ROCHET F DUFOUR G
Citation
Jl. Cantin et al., P-B1 DEFECT STUDY AND CHEMICAL CHARACTERIZATION OF THE SI(001)-SIO2 INTERFACE IN OXIDIZED POROUS SILICON, Surface science, 352, 1996, pp. 793-796
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
352
Year of publication
1996
Pages
793 - 796
Database
ISI
SICI code
0039-6028(1996)352:<793:PDSACC>2.0.ZU;2-F
Abstract
In comparison with oxidized bulk crystals, we show that the morphology of oxidized porous silicon can offer a unique opportunity of measurin g suboxide distribution by conventional XPS and to characterize thorou ghly interfacial defects by EPR.