INITIAL-STAGES OF GROWTH OF MN ON AG(100) STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION AND VALENCE-BAND PHOTOEMISSION

Citation
P. Schieffer et al., INITIAL-STAGES OF GROWTH OF MN ON AG(100) STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION AND VALENCE-BAND PHOTOEMISSION, Surface science, 352, 1996, pp. 823-827
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
352
Year of publication
1996
Pages
823 - 827
Database
ISI
SICI code
0039-6028(1996)352:<823:IOGOMO>2.0.ZU;2-7
Abstract
The growth mode of Mn on Ag(100) in the monolayer range was studied us ing X-ray photoelectron diffraction (XPD), angle-resolved valence band photoemission and low energy electron diffraction. Our results show t hat Mn-Ag intermixing takes place. The thickness of the intermixed fil ms depends critically on the growth temperature. At room temperature t he XPD data clearly indicate that Mn is located in the first and secon d topmost atomic layers. The growth at higher temperatures, i.e. for 1 ML deposited at 460 K, or 1 ML deposited at RT and then annealed at 4 60 K, results in enhanced interdiffusion and Ag segregation.