ELECTRONIC AND SURFACTANT EFFECTS OF AS INTERLAYERS AT AG INP(110) INTERFACES/

The effect of an intermediate arsenic monolayer on the evolution of an Ag/InP(110) interface has been studied using high resolution photoemi ssion, The interface reaction is suppressed by the intermediate layer very effectively. Part of the As layer segregates on top of the growin g Ag film and acts as a surfactant during the initial stages of the gr owth, The growth mode during the initial stages of the silver film for mation is changed from island to Stranski-Krastanov-like growth. There is an increase of the Schottky barrier by 0.1 eV due to the As interl ayer, Experimental results of Schottky barrier heights are discussed i n terms of both reaction-induced defect formation and theoretical pred ictions regarding dangling bond saturation.