A PROCESS FOR FABRICATING HIGH-CURRENT CIRCUITS WITH HIGH INTERCONNECT DENSITY (REPRINTED FROM PROCEEDINGS OF AL-ELECTRONICS-MANUFACTURING-TECHNOLOGY-SYMPOSIUM, LA-JOLLA, CA, SEPTEMBER 12-14 1994, PG 363)

Currently there is no cost-effective technology available for fabricat ing copper interconnect with thickness greater than 4 mils and large c ross sectional area, In contrast to the photoresist laminate manufactu rer's recommended procedure, a thick photoresist layer was achieved by laminating two layers sequentially on a substrate, Procedures for pat terning, developing, and stripping the thick photoresist layer were de veloped, A process for making greater than 4-mil-thick copper conducto rs with an aspect ratio of 1:1 in a 10-mil pitch has been developed an d its feasibility demonstrated. The new process will offer a significa nt advantage in designing and producing high-current circuits with hig h interconnect density, and requiring low conductor resistance for avo iding signal degradation and minimizing power dissipation.