PECULIARITIES OF INTERSTITIALS IN A SIMPLE CUBIC CSCL CRYSTAL

Authors
LUSHCHIK A IBRAGIMOV K KUDRJAVTSEVA I PUNG L
Citation
A. Lushchik et al., PECULIARITIES OF INTERSTITIALS IN A SIMPLE CUBIC CSCL CRYSTAL, Radiation effects and defects in solids, 136(1-4), 1995, pp. 1163-1166
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
136
Issue
1-4
Year of publication
1995
Pages
1163 - 1166
Database
ISI
SICI code
1042-0150(1995)136:1-4<1163:POIIAS>2.0.ZU;2-Q
Abstract
The processes of the thermal annealing of V-K centres (160-190 K) and anion interstitials (I and II centres) have been studied in a CsCl cry stal by means of luminescent and EPR methods. The thermal annealing of I centres in a CsCl crystal takes place in a narrow region of 16-20 K , in contrast to the multistage annealing of I centres in KCI. The tun nel recharge of a primary F, H pair leads to the formation of an alpha centre and a localized (not crowdion-type) split I interstitial.