Rt. Williams et al., TOPOGRAPHY AND DYNAMICS OF SURFACE-DEFECTS ON IONIC-CRYSTALS, Radiation effects and defects in solids, 137(1-4), 1995, pp. 1227-1235
Scanning Force Microscopy (SFM) offers new possibilities for surface s
tudies on insulators, but still needs work on interpretation of the im
ages and on the limits of what may or may not be measured. Experimenta
l and theoretical investigations of tip-sample interactions and interp
retation of images at the atomic length scale are discussed. Observati
ons have been made on pure crystals, samples doped with charged defect
s, and mixed crystal alloys. The SFM has proved useful in investigatio
ns of radiation damage on insulators at mesoscopic scales, using both
ex situ and in situ irradiation.